International Journal of

ADVANCED AND APPLIED SCIENCES

EISSN: 2313-3724, Print ISSN: 2313-626X

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 Volume 11, Issue 2 (February 2024), Pages: 118-127

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 Original Research Paper

Effect of homogeneous generalized thermoelasticity on semiconductor layer under magnetic field on Green and Naghdi model without energy dissipation

 Author(s): 

 Mohamed H. Hendy 1, 2, *, Alaa Kamal Khamis 1

 Affiliation(s):

 1Department of Mathematics, Faculty of Science, Northern Border University, Arar, Saudi Arabia
 2Department of Mathematics, Faculty of Science, Al Arish University, Al Arish, Egypt

 Full text

  Full Text - PDF

 * Corresponding Author. 

  Corresponding author's ORCID profile: https://orcid.org/0000-0003-1919-1647

 Digital Object Identifier (DOI)

 https://doi.org/10.21833/ijaas.2024.02.014

 Abstract

This paper aims to explore the impact of viscosity and time on the spread of thermoelastic waves within a uniform and isotropic three-dimensional medium subject to a thermal load on its surface. This study utilizes the temperature-rate-dependent thermoelasticity based on the GN model, specifically applying the GN II model of generalized thermoelasticity, which does not account for energy dissipation. The normal mode analysis technique is employed to address the non-dimensional coupled field equations, yielding precise formulas for displacement, stress, temperature distribution, and strain. This issue is further illustrated by graphically depicting the field variables for a material similar to copper alongside the corresponding results. Comparative analyses of numerical data, with and without considering viscosity effects, suggest that the wave propagation speed will be limited.

 © 2024 The Authors. Published by IASE.

 This is an open access article under the CC BY-NC-ND license (http://creativecommons.org/licenses/by-nc-nd/4.0/).

 Keywords

 Thermo viscoelasticity, GN II model, Energy dissipation, Normal mode analysis, State-space method, Three-dimensional medium

 Article history

 Received 9 September 2023, Received in revised form 14 January 2024, Accepted 28 January 2024

 Acknowledgment 

The authors gratefully acknowledge the approval and support of this research study by the Grant No. SCIA-2022-11-1256 from the Deanship of Scientific Research in Northern Border University, Arar, KSA.

 Compliance with ethical standards

 Conflict of interest: The author(s) declared no potential conflicts of interest with respect to the research, authorship, and/or publication of this article.

 Citation:

 Hendy MH and Khamis AK (2024). Effect of homogeneous generalized thermoelasticity on semiconductor layer under magnetic field on Green and Naghdi model without energy dissipation. International Journal of Advanced and Applied Sciences, 11(2): 118-127

 Permanent Link to this page

 Figures

 Fig. 1 Fig. 2 Fig. 3 Fig. 4 Fig. 5 Fig. 6 Fig. 7 

 Tables

 Table 1 

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